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| GaAs Hall Element HG-106A *High-stability GaAs Hall element. *Ultra mini-mold SMT package. *Shipped in packet-tape reel (4000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Voltage Max. Power Dissipation Operating Temp. Range Storage Temp. Range Vin PD Topr. Tstg. 8 150 -40 to +125 -40 to +150 V mW C C *Dimensional Drawing (mm) *Electrical Characteristics(Ta=25C) 0.3 1.50.1 0.9 0.3 0.3 Item Symbol Conditions Min. Typ. Max. Unit Output Hall Voltage VH B=0.1T, Vc=6V 150 190 mV 1 4 0 to 0.1 Input Resistance Output Resistance Offset Voltage Rin Rout Vos B=0T, Ic=0.1mA B=0T, Ic=0.1mA B=0T, Vc=6V 450 1,000 -16 750 2.50.2 1.50.1 2,000 +16 mV N 3 5 Temp. Coefficient of VH VH 25C to 125C -0.06 %/C 2 3 0.1 0.25 Temp. Coefficient of Rin Linearity of output Hall voltage Rin B=0T, Ic=0.1mA 0.3 %/C 3 K B=0.1/0.5T, Ic=0.5mA 2 % 0.60.05 Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 2. VH = VH (T1) X VH (T2) - VH) (T1) X 100 (T2 - T1 1 -R 3. Rin = Rin (T1) X Rin (T2) - T in (T1) X 100 (T ) 2 1 0.35 5 Pinning Input Output 1() 2() 3 4 () () K (B1) - K (B2) 4. K = [K (B1) + K (B2)] / 2 X 100 T1 = 25C, T2 = 125C K= VH IC * B B1 = 0.5T, B2 = 0.1T *Characteristic Curves Allowable Package Power Dissipation (PD-Ta) 200 Power Dissipation(mW) 160 120 80 40 0 0 20 40 60 80 100 120 140 Ambient Temperature.(C) 38 HG-106A Rin-T 800 700 VH-B 600 500 Output Voltage:VH(mV) Ic const Vc const Ic = 10 (mA) Vc = 6 (V) Ta = 25 (C) b Vin, Ic Input Resistance:Rin( ) 600 500 400 300 200 100 0 -50 0 50 Ambient Temperature(C) 400 300 200 100 0 0 c 100 150 100 200 300 Magnetic Flux Density B (mT) VH-T 250 VH-Vc, VH-Ic 250 Ic const Vc const Vin Output Voltage:VH(mV) Vin Ic Output Voltage:VH(mV) 200 200 B = 0.1 (T) Ta = 25 (C) 150 150 Ic 100 Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 0.1 (T) 100 50 50 Ic:(mA) g 2 4 6 8 10 Vc:(V) 0 -50 0 50 Ambient Temperature(C) 100 150 0 0 Ic (mA) Input Current Vc (V) Input Voltage Vos-T 8 7 Vin Ic Vos-Vc, Vos-Ic 15 Ic const Vc const Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) 6 5 4 3 2 1 0 -50 0 50 Ambient Temperature(C) Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 6 (mT) 10 B = 0 (mT) Ta = 25 (C) Vin Ic 5 j 0 100 150 0 2 4 6 8 Ic (mA) Input Current Vc (V) Input Voltage Ic:(mA) 10 Vc:(V) *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=600( ), Vos=6.3(mV), Vc=6(V) 39 |
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